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| Composite Transistors XN01211 (XN1211) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 0.16+0.10 -0.06 s Features q q 3 4 5 1.50+0.25 -0.05 2.8+0.2 -0.3 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2 0.30+0.10 -0.05 1 (0.65) 1.1+0.2 -0.1 q UNR1211(UN1211) x 2 elements s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 300 150 -55 to +150 Unit V V mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini5-G1 Pakage Marking Symbol: 9T Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio *1 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = -2mA, f = 200MHz -30% 0.8 150 10 1.0 +30% 1.2 4.9 0.2 35 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.5 typ max Unit V V A A mA Ratio between 2 elements Note) The Part number in the Parenthesis shows conventional part number. 0 to 0.1 1.1+0.3 -0.1 s Basic Part Number of Element 10 0.40.2 5 1 Composite Transistors PT -- Ta 500 XN01211 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=10V 30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Collector current IC (mA) 300 Ta=75C 200 25C 100 -25C 0.2mA 40 20 0 0 2 4 6 8 10 12 25C Ta=75C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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